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| AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical. Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 32m (VGS = 4.5V) RDS(ON) < 50m (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain CurrentA Pulsed Drain Current B MOSFET 30 12 6.9 5.8 40 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 2 1.44 -55 to 150 Typ 55 90 40 47.5 71 32 30 3 2 40 2 1.44 -55 to 150 Max 62.5 110 48 62.5 110 40 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient C/W Alpha & Omega Semiconductor, Ltd. AO4900A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=6A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 40 20 25 23 34 26 0.71 1 4.5 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=8.5A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=1.8, RGEN=6 IF=5A, dI/dt=100A/s 3.5 21.5 2.7 16.8 8 0.45 0.007 3.2 12 37 20 12 0.5 0.05 10 20 pF mA 1.5 12 1100 27 40 32 50 1 Min 30 0.002 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A Irm CT Maximum reverse leakage current Junction Capacitance VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VR=15V A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : Feb 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 60 1.7 50 RDS(ON) (m) 40 30 20 VGS=10V 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance VGS=2.5V 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5 VGS=10V VGS=2.5V VGS=2.5V VGS=10V VGS=4.5V VGS=2V 10V 4.5V 3V ID(A) 16 12 125C 8 25C 4 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 20 VGS=4.5V 100 90 80 RDS(ON) (m) 70 60 50 125C IS (A) ID=6.9A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125C 40 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-04 COMPONENTS IN 25C SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING LIFE 30 1.0E-05 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=6.9A Capacitance (pF) 1200 1000 800 600 400 Crss Coss Ciss 100.0 RDS(ON) limited T J(Max)=150C T A=25C Power (W) 50 40 30 20 10 0 100 0.0001 0.001 0.01 0.1 1 T J(Max)=150C T A=25C ID (Amps) 10.0 10s 1.0 DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 1ms 10ms 10s 1s 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PD APPLICATIONS OR USES AS CRITICAL 0.1 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING T IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TOon T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C 1 IF (Amps) Capacitance (pF) 250 f = 1MHz 200 150 100 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (Volts) Figure 12: Schottky Forward Characteristics 5 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.1 0.01 25C 0.001 0.7 Leakage Current (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=3A 100 10 1 VR=30V 0.1 0.01 0.001 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature VF (Volts) IF=1A Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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